SIPT430TA(3) HUTSON THYRISTOR SEMICONDUCTOR DEVICE
SIPT430TA(3) HUTSON THYRISTOR SEMICONDUCTOR DEVICE LOT 35185 F62 NEW OLD STOCK Technical Data | NSN 5961-01-515-4758 Characteristic Specifications SEMICONDUCTOR MATERIAL SILICON VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE CURRENT RATING PER CHARACTERISTIC 30.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL POWER RATING PER CHARACTERISTIC 40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 110.0 DEG CELSIUS JUNCTION INCLOSURE MATERIAL METAL MOUNTING METHOD THREADED STUD MOUNTING FACILITY QUANTITY 1 TERMINAL TYPE AND QUANTITY 3 TAB, SOLDER LUG OVERALL LENGTH 1.400 INCHES NOMINAL III END ITEM IDENTIFICATION AN/ASM-686A