2N3567 Bipolar Junction Transistor, NPN Type, TO-105, 3 PIN, GOLD LEADS
2N3567 Bipolar Junction Transistor, NPN Type, TO-105, 3 PIN, GOLD LEADS NEW OLD STOCK LOT 30884 F27 Characteristic Specifications SEMICONDUCTOR MATERIAL SILICON INTERNAL CONFIGURATION JUNCTION CONTACT INTERNAL JUNCTION CONFIGURATION NPN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CURRENT RATING PER CHARACTERISTIC 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION INCLOSURE MATERIAL PLASTIC MOUNTING METHOD TERMINAL TERMINAL LENGTH 0.400 INCHES MINIMUM TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD OVERALL LENGTH 0.250 INCHES MAXIMUM OVERALL DIAMETER 0.330 INCHES MAXIMUM
Lot of 4 – Teledyne – 2N3567 – Transistor, NPN. 350mW, Silicon TO-105 Gold Leads
350mW, Silicon, TO-105 Gold Leads. Power Dissipation PD: 350mW. Polarity: NPN. 2 Lots is 2 x 4 = 8, 3 Lots is 3 x 4 = 12, Ect…. Current Gain hFE: Typically 40 to 120 at 150mA.