1990’s 4” Silicon Carbide Early Research Lithographic Circuit Wafer
USD 145.00 USD
Specifications
| Brand | Rockwell |
| Wafer Diameter | 4 in |
These would be from early design work during that period. Design was focused for uses in areas of high temperature electronics (300-600 C), high power devices (JFETS, Mosfets, SiC Schottky diodes), radiation hardened electronics and military and aerospace uses along with specialty sensor technology.